High-temperature stability of lasing wavelength in GaAsSb/GaAs double quantum wells lasers

Hsin-Chieh Yu*, Cheng Tien Wan, Yan Kuin Su, Ricky W. Chuang, Wei Cheng Chen, Chun Yuan Huang, Wei Hung Lin, Manfred H. Pilkuhn

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


High-temperature stability of lasing wavelength of GaAsSb/GaAs quantum well (QW) lasers grown by metal-organic vapor phase epitaxy will be demonstrated. According to the best of our knowledge, this is the first trial of using triethylgallium (TEGa) as the precursor to grow QW at low temperature (525°C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature (dλ/dT) from 0.24 to 0.287 nm/K. These values are lower than other previously reported results. The QW grown at high temperature (600°C) by using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature and dλ/dT is 0.36 nm/K, which is higher than those lasers grown at lower temperature.

Original languageEnglish
Title of host publicationOptical Components and Materials VII
StatePublished - 3 May 2010
EventOptical Components and Materials VII - San Francisco, CA, United States
Duration: 26 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceOptical Components and Materials VII
CountryUnited States
CitySan Francisco, CA


  • GaAsSb
  • Laser
  • Quantum well
  • TEGa
  • TMGa

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