High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Tsu Chi Chang*, Shiou Yi Kuo, Jhen Ting Lian, Kuo Bin Hong, Shing Chung Wang, Tien-chang Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) capable of high-temperature operation. The GaN-based VCSELs include double dielectric distributed Bragg reflectors and epitaxially grown p-i-n InGaN multiple-quantum-well active layers initially deposited on c-plane sapphire substrates that are bonded to a silicon substrate with a p-side-down and patterned mirror configuration, allowing effective heat dissipation. GaN-based VCSELs with an emission aperture 10 m in diameter were fabricated, and their temperature-dependent lasing characteristics revealed that the VCSELs can endure 350 K, as measured under quasicontinuous-wave operation conditions. The temperature-dependent lasing wavelength shift occurs at a rate of dλFP/dT ≈ 0.012 nm/K. The high-temperature operation of GaN-based VCSELs was attributed to the well-matched gain-mode offset, the p-side-down configuration, and the reduced lateral size of the bottom distributed Bragg reflector with recessed metal.

Original languageEnglish
Article number112101
JournalApplied Physics Express
Volume10
Issue number11
DOIs
StatePublished - 1 Nov 2017

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