High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects

Y. C. Wu*, Edward Yi Chang, Y. C. Lin, W. C. Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Temperature-dependent electrical characteristics of a Copper metallized AlGaAs/InGaAs psedomophic highelectron- mobility transistor (PHEMT) Single-Pole-Double- Throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. The thermal threshold coefficients, defined as δVth/δT, is of -0.25 mV/K from 300 to 500 K. The Cu metallized SPDT switches exhibited performance at the ambient of 380 K with insertion loss of less than 0.5 dB, isolation larger than 40 dB at 2.5 GHz. The copper metallized switches, with the excellent sub-threshold and hightemperature RF characteristics, shows good microwave performance and material stability for high temperature applications.

Original languageEnglish
Title of host publication2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
Pages321-323
Number of pages3
StatePublished - 1 Dec 2007
Event22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 - Austin, TX, United States
Duration: 14 May 200717 May 2007

Publication series

Name2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Conference

Conference22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
CountryUnited States
CityAustin, TX
Period14/05/0717/05/07

Keywords

  • Copper metallization
  • High-temperature
  • PHEMT
  • Platinum
  • SPDT
  • Switch

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