High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects

Y. C. Wu; Edward Yi Chang; Y. C. Lin; W. C. Wu

High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects

Y. C. Wu^*, Edward Yi Chang, Y. C. Lin, W. C. Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Temperature-dependent electrical characteristics of a Copper metallized AlGaAs/InGaAs psedomophic highelectron- mobility transistor (PHEMT) Single-Pole-Double- Throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. The thermal threshold coefficients, defined as δV_th/δT, is of -0.25 mV/K from 300 to 500 K. The Cu metallized SPDT switches exhibited performance at the ambient of 380 K with insertion loss of less than 0.5 dB, isolation larger than 40 dB at 2.5 GHz. The copper metallized switches, with the excellent sub-threshold and hightemperature RF characteristics, shows good microwave performance and material stability for high temperature applications.

Original language	English
Title of host publication	2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
Pages	321-323
Number of pages	3
State	Published - 1 Dec 2007
Event	22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 - Austin, TX, United States Duration: 14 May 2007 → 17 May 2007

Publication series

Name	2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Conference

Conference	22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
Country	United States
City	Austin, TX
Period	14/05/07 → 17/05/07

Keywords

Copper metallization
High-temperature
PHEMT
Platinum
SPDT
Switch

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Cite this

Wu, Y. C., Chang, E. Y., Lin, Y. C., & Wu, W. C. (2007). High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects. In 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 (pp. 321-323). (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).

Wu, Y. C. ; Chang, Edward Yi ; Lin, Y. C. ; Wu, W. C. / High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects. 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007. pp. 321-323 (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).

@inproceedings{c9e0e4df93ea4320b7e0dc06e32939c0,

title = "High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects",

abstract = "Temperature-dependent electrical characteristics of a Copper metallized AlGaAs/InGaAs psedomophic highelectron- mobility transistor (PHEMT) Single-Pole-Double- Throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. The thermal threshold coefficients, defined as δVth/δT, is of -0.25 mV/K from 300 to 500 K. The Cu metallized SPDT switches exhibited performance at the ambient of 380 K with insertion loss of less than 0.5 dB, isolation larger than 40 dB at 2.5 GHz. The copper metallized switches, with the excellent sub-threshold and hightemperature RF characteristics, shows good microwave performance and material stability for high temperature applications.",

keywords = "Copper metallization, High-temperature, PHEMT, Platinum, SPDT, Switch",

author = "Wu, {Y. C.} and Chang, {Edward Yi} and Lin, {Y. C.} and Wu, {W. C.}",

year = "2007",

month = dec,

day = "1",

language = "English",

isbn = "1893580091",

series = "2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007",

pages = "321--323",

booktitle = "2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007",

note = "null ; Conference date: 14-05-2007 Through 17-05-2007",

}

Wu, YC, Chang, EY, Lin, YC & Wu, WC 2007, High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects. in 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, pp. 321-323, 22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, Austin, TX, United States, 14/05/07.

High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects. / Wu, Y. C.; Chang, Edward Yi; Lin, Y. C.; Wu, W. C.

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007. p. 321-323 (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects

AU - Wu, Y. C.

AU - Chang, Edward Yi

AU - Lin, Y. C.

AU - Wu, W. C.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Temperature-dependent electrical characteristics of a Copper metallized AlGaAs/InGaAs psedomophic highelectron- mobility transistor (PHEMT) Single-Pole-Double- Throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. The thermal threshold coefficients, defined as δVth/δT, is of -0.25 mV/K from 300 to 500 K. The Cu metallized SPDT switches exhibited performance at the ambient of 380 K with insertion loss of less than 0.5 dB, isolation larger than 40 dB at 2.5 GHz. The copper metallized switches, with the excellent sub-threshold and hightemperature RF characteristics, shows good microwave performance and material stability for high temperature applications.

AB - Temperature-dependent electrical characteristics of a Copper metallized AlGaAs/InGaAs psedomophic highelectron- mobility transistor (PHEMT) Single-Pole-Double- Throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. The thermal threshold coefficients, defined as δVth/δT, is of -0.25 mV/K from 300 to 500 K. The Cu metallized SPDT switches exhibited performance at the ambient of 380 K with insertion loss of less than 0.5 dB, isolation larger than 40 dB at 2.5 GHz. The copper metallized switches, with the excellent sub-threshold and hightemperature RF characteristics, shows good microwave performance and material stability for high temperature applications.

KW - Copper metallization

KW - High-temperature

KW - PHEMT

KW - Platinum

KW - SPDT

KW - Switch

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M3 - Conference contribution

AN - SCOPUS:84887476196

SN - 1893580091

SN - 9781893580091

T3 - 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

SP - 321

EP - 323

BT - 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Y2 - 14 May 2007 through 17 May 2007

ER -