High temperature behaviour of GaN-on-Si high power MISHEMT devices

Dirk Wellekens; Rafael Venegas; Xuanwu Kang; Mohammed Zahid; Tian-Li Wu; Denis Marcon; Puneet Srivastava; Marleen Van Hove; Stefaan Decoutere

doi:10.1109/ESSDERC.2012.6343393

High temperature behaviour of GaN-on-Si high power MISHEMT devices

Dirk Wellekens^*, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si₃N₄/Al₂O₃ bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.

Original language	English
Title of host publication	2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages	302-305
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343393
State	Published - 11 Dec 2012
Event	42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sep 2012 → 21 Sep 2012

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	42nd European Solid-State Device Research Conference, ESSDERC 2012
Country	France
City	Bordeaux
Period	17/09/12 → 21/09/12

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Wellekens, D., Venegas, R., Kang, X., Zahid, M., Wu, T-L., Marcon, D., Srivastava, P., Van Hove, M., & Decoutere, S. (2012). High temperature behaviour of GaN-on-Si high power MISHEMT devices. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 302-305). [6343393] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343393

Wellekens, Dirk ; Venegas, Rafael ; Kang, Xuanwu ; Zahid, Mohammed ; Wu, Tian-Li ; Marcon, Denis ; Srivastava, Puneet ; Van Hove, Marleen ; Decoutere, Stefaan. / High temperature behaviour of GaN-on-Si high power MISHEMT devices. 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. pp. 302-305 (European Solid-State Device Research Conference).

@inproceedings{2bb95f7ab2f54fa28e15aed9525a163f,

title = "High temperature behaviour of GaN-on-Si high power MISHEMT devices",

abstract = "The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.",

author = "Dirk Wellekens and Rafael Venegas and Xuanwu Kang and Mohammed Zahid and Tian-Li Wu and Denis Marcon and Puneet Srivastava and {Van Hove}, Marleen and Stefaan Decoutere",

year = "2012",

month = dec,

day = "11",

doi = "10.1109/ESSDERC.2012.6343393",

language = "English",

isbn = "9781467317078",

series = "European Solid-State Device Research Conference",

pages = "302--305",

booktitle = "2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012",

note = "null ; Conference date: 17-09-2012 Through 21-09-2012",

}

Wellekens, D, Venegas, R, Kang, X, Zahid, M, Wu, T-L, Marcon, D, Srivastava, P, Van Hove, M & Decoutere, S 2012, High temperature behaviour of GaN-on-Si high power MISHEMT devices. in 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012., 6343393, European Solid-State Device Research Conference, pp. 302-305, 42nd European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, 17/09/12. https://doi.org/10.1109/ESSDERC.2012.6343393

High temperature behaviour of GaN-on-Si high power MISHEMT devices. / Wellekens, Dirk; Venegas, Rafael; Kang, Xuanwu; Zahid, Mohammed; Wu, Tian-Li; Marcon, Denis; Srivastava, Puneet; Van Hove, Marleen; Decoutere, Stefaan.

2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. p. 302-305 6343393 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High temperature behaviour of GaN-on-Si high power MISHEMT devices

AU - Wellekens, Dirk

AU - Venegas, Rafael

AU - Kang, Xuanwu

AU - Zahid, Mohammed

AU - Wu, Tian-Li

AU - Marcon, Denis

AU - Srivastava, Puneet

AU - Van Hove, Marleen

AU - Decoutere, Stefaan

PY - 2012/12/11

Y1 - 2012/12/11

N2 - The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.

AB - The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.

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U2 - 10.1109/ESSDERC.2012.6343393

DO - 10.1109/ESSDERC.2012.6343393

M3 - Conference contribution

AN - SCOPUS:84870623913

SN - 9781467317078

T3 - European Solid-State Device Research Conference

SP - 302

EP - 305

BT - 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012

Y2 - 17 September 2012 through 21 September 2012

ER -

High temperature behaviour of GaN-on-Si high power MISHEMT devices

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