High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers

Hao-Chung Kuo*, Y. S. Chang, F. Y. Lai, T. H. Hseuh, L. T. Chu, L. H. Laih, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6×6 μm2. These VCSELs exhibit kink-free current-light output with threshold currents ∼1.14 mA, and the slope efficiencies ∼0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p)=21 ps. We have accumulated life test data up to 1000 h at 70 °C/10 mA.

Original languageEnglish
Pages (from-to)483-485
Number of pages3
JournalSolid-State Electronics
Volume48
Issue number3
DOIs
StatePublished - 1 Mar 2004

Keywords

  • High speed
  • Implantation-induced disorder
  • Si implant
  • VCSEL

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