In this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6×6 μm2. These VCSELs exhibit kink-free current-light output with threshold currents ∼1.14 mA, and the slope efficiencies ∼0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p)=21 ps. We have accumulated life test data up to 1000 h at 70 °C/10 mA.
- High speed
- Implantation-induced disorder
- Si implant