This work experimentally demonstrated a one-transistor ferroelectric versatile memory with the multi-technique integration of negative-capacitance mechanism, ferroelectric polarization effect and metal-strained engineering. The negative-capacitance versatile memory featured a steep sub-60mV/dec subthreshold swing, fast 20-ns switching speed and long 1012 cycled endurance. We successfully demonstrated that the metal-gate-induced strain could help to improve ferroelectric phase transformation. The excellent endurance characteristics could be ascribed to efficient ferroelectric negative-capacitance switching under low program/erase voltages.
|Title of host publication||12th IEEE International Conference on ASIC (ASICON)|
|State||Published - 2017|
Chang, C-Y., Fan, C. C., Liu, C., Chiu, Y. C., & Cheng, C-H. (2017). High Speed Negative Capacitance Ferroelectric Memory. In 12th IEEE International Conference on ASIC (ASICON) https://doi.org/10.1109/ASICON.2017.8252397