We report a low Ith (∼1.5mA), high power (>5mW) and speed performance (10Gb/s operation) single mode GaAs VCSEL employing O+ implantation, MOCVD re-growth and selective oxidation.
|Number of pages||2|
|Journal||OSA Trends in Optics and Photonics Series|
|State||Published - 1 Jan 2003|
|Event||Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States|
Duration: 1 Jun 2003 → 6 Jun 2003