High speed modulation of large-area single-transverse-mode vertical-cavity surface-emitting

Tao Hung Hsueh*, Hao-Chung Kuo, Fang I. Lai, Li Hung Lai, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We report a low Ith (∼1.5mA), high power (>5mW) and speed performance (10Gb/s operation) single mode GaAs VCSEL employing O+ implantation, MOCVD re-growth and selective oxidation.

Original languageEnglish
Pages (from-to)1396-1397
Number of pages2
JournalOSA Trends in Optics and Photonics Series
Volume88
StatePublished - 1 Jan 2003
EventConference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States
Duration: 1 Jun 20036 Jun 2003

Fingerprint Dive into the research topics of 'High speed modulation of large-area single-transverse-mode vertical-cavity surface-emitting'. Together they form a unique fingerprint.

  • Cite this