High-speed modulation of InGaAs: Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-μm emission wavelength

Hao-Chung Kuo*, Y. H. Chang, H. H. Yao, Y. A. Chang, F. I. Lai, M. Y. Tsai, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

1.27-μm InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than ∼35% as the temperature raised from room temperature to 70 °C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of ∼ 5.25 GHz/(mA)1/2. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 °C to 70 °C.

Original languageEnglish
Pages (from-to)528-530
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number3
DOIs
StatePublished - 1 Mar 2005

Keywords

  • Characterization
  • InGaAsSb
  • Laser diodes
  • Metal-organic chemical vapor deposition (MOCVD)
  • Optical fiber devices
  • Semiconducting

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