High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs

Hao-Chung Kuo*, Y. S. Chang, F. Y. Lai, T. H. Hsueh, L. H. Laih, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

High performance 850 nm InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85°C.

Original languageEnglish
Pages (from-to)1051-1053
Number of pages3
JournalElectronics Letters
Volume39
Issue number14
DOIs
StatePublished - 10 Jul 2003

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