HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.

K. C. Wang; P. M. Asbeck; Mau-Chung Chang; D. L. Miller; F. H. Eisen

HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.

K. C. Wang^*, P. M. Asbeck, Mau-Chung Chang, D. L. Miller, F. H. Eisen

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

6 Scopus citations

Abstract

The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.

Original language	English
Pages	99-102
Number of pages	4
State	Published - 1 Dec 1985

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title = "HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.",

abstract = "The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.",

author = "Wang, {K. C.} and Asbeck, {P. M.} and Mau-Chung Chang and Miller, {D. L.} and Eisen, {F. H.}",

year = "1985",

month = dec,

day = "1",

language = "English",

pages = "99--102",

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AU - Wang, K. C.

AU - Asbeck, P. M.

AU - Chang, Mau-Chung

AU - Miller, D. L.

AU - Eisen, F. H.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.

AB - The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0022325052&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0022325052

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ER -

HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.

Abstract

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