HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS.

K. C. Wang*, P. M. Asbeck, Mau-Chung Chang, D. L. Miller, F. H. Eisen

*Corresponding author for this work

Research output: Contribution to conferencePaper

6 Scopus citations

Abstract

The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. On a quasistatic basis, the offset voltage was found to be generally below 4 mV, and hysteresis about 1 mV. The HBT comparators could be clocked at frequencies above 2. 5 GHz; they operated over a range of reference voltage of 2 V. The preliminary yield was high. These results indicate that the HBT comparators are suitable for flash analog-to-digital converters with up to 8-bit accuracy, and sampling rates well above 1 GHz.

Original languageEnglish
Pages99-102
Number of pages4
StatePublished - 1 Dec 1985

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