High-speed (ft = 78ghz) alinas/gainas single heterojunction hbt

C. W. Farley, Mau-Chung Chang, P. M. Asbeck, N. H. Sheng, R. Pierson, G. J. Sullivan, K. C. Wang, R. B. Nubling

Research output: Contribution to journalArticle

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Abstract

High-performance AlInAs/GaInAs HBTs for low-power digital circuits have been demonstrated. Large-area devices exhibit high current gain (up to 600), observable down to low currents. Small-area devices display ƒt up to 78 GHz and ƒmax up to 45 GHz. Fitting S-parameter measurements to an equivalent circuit model shows that ƒmax is limited by a large RbCbc time constant in the base circuit. These transistors have been used to fabricate the first frequency divider demonstrated in this material system.

Original languageEnglish
Pages (from-to)846-847
Number of pages2
JournalElectronics Letters
Volume25
Issue number13
DOIs
StatePublished - 22 Jun 1989

Keywords

  • Bipolar devices
  • Digital circuits
  • Semiconductor devices and materials
  • Transistors

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    Farley, C. W., Chang, M-C., Asbeck, P. M., Sheng, N. H., Pierson, R., Sullivan, G. J., Wang, K. C., & Nubling, R. B. (1989). High-speed (ft = 78ghz) alinas/gainas single heterojunction hbt. Electronics Letters, 25(13), 846-847. https://doi.org/10.1049/el:19890570