High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices

Meng Han Lin*, Ming Chi Wu, Chun Yang Huang, Chen Hsi Lin, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

The fabrication of SrZrO3 (SZO) memory devices with oxygen-rich (OR) and oxygen-deficient (OD) double layers, their resistive switching (RS) characteristics and mechanisms are investigated in this study. Due to the difference in oxygen content between the OR and OD layers formed by an oxygen flow control (OFC) process during SZO deposition, the RS region is effectively reduced and localized within the OR layer, which leads to a low operation voltage and stable RS behaviours. Furthermore, the OFC SZO device exhibits high-speed switching (10 ns) over 400 times and long retention (>10 6 s), showing promising potential for next-generation nonvolatile memory applications.

Original languageEnglish
Article number295404
JournalJournal of Physics D: Applied Physics
Volume43
Issue number29
DOIs
StatePublished - 16 Jul 2010

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