High speed 8:1 multiplexer and 1:8 demultiplexer implemented with AlGaAs/GaAs HBTs

R. B. Nubling*, J. Yu, K. C. Wang, P. M. Asbeck, N. H. Sheng, Mau-Chung Chang, R. L. Pierson, G. J. Sullivan, M. A. McDonald, A. J. Price, D. M. Chen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

14 Scopus citations

Abstract

Development of an 8:1 multiplexer and a 1:8 demultiplexer implemented with AlGaAs/GaAs heterojunction bipolar transistors is reported. The circuits were designed for lightwave communications and operate at data rates above 6 Gb/s. The intrinsic speed of the circuits can be further increased by design changes with more power allocated per gate and better time matching at the high-speed ends. The circuit design, fabrication, and test results are presented.

Original languageEnglish
Pages53-56
Number of pages4
StatePublished - 1 Oct 1990
Event12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA
Duration: 7 Oct 199010 Oct 1990

Conference

Conference12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC
CityNew Orleans, LA, USA
Period7/10/9010/10/90

Fingerprint Dive into the research topics of 'High speed 8:1 multiplexer and 1:8 demultiplexer implemented with AlGaAs/GaAs HBTs'. Together they form a unique fingerprint.

Cite this