Development of an 8:1 multiplexer and a 1:8 demultiplexer implemented with AlGaAs/GaAs heterojunction bipolar transistors is reported. The circuits were designed for lightwave communications and operate at data rates above 6 Gb/s. The intrinsic speed of the circuits can be further increased by design changes with more power allocated per gate and better time matching at the high-speed ends. The circuit design, fabrication, and test results are presented.
|Number of pages||4|
|State||Published - 1 Oct 1990|
|Event||12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA|
Duration: 7 Oct 1990 → 10 Oct 1990
|Conference||12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC|
|City||New Orleans, LA, USA|
|Period||7/10/90 → 10/10/90|