High separation rate of epitaxial lift-off using hydrophilic solvent for III-V solar cell and reusable applications

Ray-Hua Horng, Fan Lei Wu, Sin Liang Ou, Yu Cheng Kao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Through the epitaxial lift-off (ELO) process using the HF solutions mixed with hydrophilic substances consisting of acetone (ACE), isopropanol (IPA), and methanol (MA), the separation rate for the GaAs substrate and the III-V solar cell can be improved significantly. Especially for the use of HF:ACE etchant, a extremely high lateral etching rate (14.3 μm/min) of the AlAs sacrificial layer can be achieved, as compared with that employing the pure HF etchant (3.6 μm/min). In addition, by conducting the ELO technique, the GaAs substrate was reused for four times, indicating its high potential for the reusable applications.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period14/06/1519/06/15

Keywords

  • epitaxial lift-off (ELO)
  • III-V solar cell
  • lateral etching rate
  • sacrificial layer

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    Horng, R-H., Wu, F. L., Ou, S. L., & Kao, Y. C. (2015). High separation rate of epitaxial lift-off using hydrophilic solvent for III-V solar cell and reusable applications. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356349] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356349