High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

Di Cheng Wu, You Wei Pan, Jenq Shinn Wu, Shih Wei Lin, Sheng-Di Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

Original languageEnglish
Article number172403
JournalApplied Physics Letters
Volume108
Issue number17
DOIs
StatePublished - 25 Apr 2016

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