High-resistivity sol-gel ITO thin film as an interfacial buffer layer for bulk heterojunction organic solar cells

A. K. Chu, W. C. Tien, S. W. Lai, H. L. Tsai, R. Y. Bai, X. Z. Lin, L. Y. Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Bulk heterojunction organic solar cells have been fabricated by inserting a high-resistivity sol-gel ITO buffer layer between an ITO anode and a PEDOT:PSS hole injection layer. The performance of the devices with the sol-gel ITO atop the ITO anodes treated by conventional annealing at 500 °C for 1 h and rapid thermal process (RTP) at 800 °C for 20 and 30 s was compared. The best power conversion efficiency of 3.5% was achieved for the device with the 15-nm-thick sol-gel ITO treated with RTP at 800 °C for 30 s, as compared with 2.7% of the standard device under an illumination of AM 1.5. In addition, the short circuit current of the device was significantly increased by 42.7%. The observed enhancement of the short circuit current can be attributed an interfacial energy step created by the high-resistivity sol-gel ITO between the ITO anode and the PEDOT:PSS.

Original languageEnglish
Pages (from-to)99-104
Number of pages6
JournalOrganic Electronics
Volume46
DOIs
StatePublished - 1 Jul 2017

Keywords

  • Bulk heterojunction organic solar cells
  • Interface engineering
  • P3HT:PCBM
  • Rapid thermal process
  • Sol-gel ITO

Fingerprint Dive into the research topics of 'High-resistivity sol-gel ITO thin film as an interfacial buffer layer for bulk heterojunction organic solar cells'. Together they form a unique fingerprint.

Cite this