High-reliability dynamic-threshold source-side injection for 2-bit/cell with MLC operation of wrapped select-gate SONOS in NOR-type flash memory

Kuan Ti Wang*, Tien-Sheng Chao, Woei Cherng Wu, Wen Luh Yang, Chien Hsing Lee, Tsung Min Hsieh, Jhyy Cheng Liou, Shen De Wang, Tzu Ping Chen, Chien Hung Chen, Chih Hung Lin, Hwi Huang Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

For the first time, a high-performance ΤPGM = 200 ns/ΤERS = 5 ms) cell with superior reliability characteristics is demonstrated in a nor-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate siliconoxidenitrideoxidesilicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight VTH distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention.

Original languageEnglish
Article number5510121
Pages (from-to)2335-2338
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume57
Issue number9
DOIs
StatePublished - 1 Sep 2010

Keywords

  • Flash memory
  • multilevel states in a cell (MLC)
  • NOR
  • silicon-oxide-nitride- oxide-silicon (SONOS)

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