For the first time, a high-performance ΤPGM = 200 ns/ΤERS = 5 ms) cell with superior reliability characteristics is demonstrated in a nor-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate siliconoxidenitrideoxidesilicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight VTH distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention.
- Flash memory
- multilevel states in a cell (MLC)
- silicon-oxide-nitride- oxide-silicon (SONOS)