High reflectivity distributed Bragg reflectors for 1.55 μm VCSELs using InP/airgap

J. Y. Tsai, Tien-chang Lu, S. C. Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A high reflecting InP/airgap distributed Bragg reflector (DBR) using InGaAs as sacrificial layers is demonstrated. The 3-pair InP/airgap DBR is formed by etching the InGaAs layers of the MOCVD grown InP/InGaAs structure using H2SO4 solution. A rigid and stable InP/airgap DBR with a peak reflectivity of 99.9% at 1.54 μm and a stopband width of about 200 nm is achieved.

Original languageEnglish
Pages (from-to)1825-1828
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number10
DOIs
StatePublished - 1 Oct 2003

Keywords

  • DBR
  • Reflectivity
  • VCSEL

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