High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed bragg mirror on inp substrate for 1.3-1.55μm wavelengths

K. Tai, R. J. Fischer, A. Y. Cho, Kai-Feng Huang

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Periodic AlAs0.52Sb0.48/Ga0.47In0.53As quarter-wave distributed Bragg reflectors on InP substrates were prepared and with only eight pairs a peak reflectivity of 90% and a bandwidth of ≥0.2μm were measured. By the addition of P to the GaInAs alloy, this mirror structure would be useful for InP-based surface emitting laser application at 1.3-1.55 μm wavelengths and would be superior to the previously studied GaInAsP/InP structure, where ∼20 pairs are required to achieve similar reflection.

Original languageEnglish
Pages (from-to)1159-1160
Number of pages2
JournalElectronics Letters
Volume25
Issue number17
DOIs
StatePublished - 17 Aug 1989

Keywords

  • Quantum optics
  • Semiconductor devices and materials
  • Semiconductor lasers

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