ZnTe/ZnSe distributed Bragg reflectors with 98% reflectance were grown on GaAs (001) by molecular beam epitaxy. The center of the stop band was designed to be at 570nm. The reflectivity spectrum was simulated using the dielectric model and the matrix method in optics.
|Number of pages||9|
|Journal||Chinese Journal of Physics|
|State||Published - 1 Oct 2003|