High Reflectance ZnTe/ZnSe Distributed Bragg Reflector at 570 nm

C. B. Fu, C. S. Yang, M. C. Kuo, Y. J. Lai, J. Lee, J. L. Shen, Wu-Ching Chou*, S. Jeng

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

ZnTe/ZnSe distributed Bragg reflectors with 98% reflectance were grown on GaAs (001) by molecular beam epitaxy. The center of the stop band was designed to be at 570nm. The reflectivity spectrum was simulated using the dielectric model and the matrix method in optics.

Original languageEnglish
Pages (from-to)535-543
Number of pages9
JournalChinese Journal of Physics
Volume41
Issue number5
StatePublished - 1 Oct 2003

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    Fu, C. B., Yang, C. S., Kuo, M. C., Lai, Y. J., Lee, J., Shen, J. L., Chou, W-C., & Jeng, S. (2003). High Reflectance ZnTe/ZnSe Distributed Bragg Reflector at 570 nm. Chinese Journal of Physics, 41(5), 535-543.