High reflectance contacts to P-type GaN using Ag-La Alloys

Bo Yuan Cheng, I. Chen Chen, Cheng-Huang Kuo, Li Chuan Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we have investigated a new Ag-La alloy contact to p-type GaN for producing high reflectance and low contact resistivity ohmic contacts. A low specific contact resistivity of 5.87×10-5 ω cm and high light reflectance of 85% at 460 nm could be obtained from Ag-La alloy contacts after annealed at 350 oC in air ambient. The formation of lanthanum oxide suppresses the Ag oxidation during annealing process and leads to a good ohmic contact with high reflectance. Additionally, compared with pure Ag contacts, the Ag-La alloy contacts show better thermal stability after a long thermal annealing at 300°C in air ambient.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2012, CSTIC 2012
Pages1291-1294
Number of pages4
Edition1
DOIs
StatePublished - 1 Dec 2012
EventChina Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
Duration: 18 Mar 201219 Mar 2012

Publication series

NameECS Transactions
Number1
Volume44
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2012, CSTIC 2012
CountryChina
CityShanghai
Period18/03/1219/03/12

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  • Cite this

    Cheng, B. Y., Chen, I. C., Kuo, C-H., & Chang, L. C. (2012). High reflectance contacts to P-type GaN using Ag-La Alloys. In China Semiconductor Technology International Conference 2012, CSTIC 2012 (1 ed., pp. 1291-1294). (ECS Transactions; Vol. 44, No. 1). https://doi.org/10.1149/1.3694462