High quality vertical light emitting diodes fabrication by mechanical lift-off technique

Po Min Tu, Shih Chieh Hsu, Chun-Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2x10(9) to 1x10(8) cm(-2). Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.
Original languageEnglish
Title of host publication11th International Conference on Solid State Lighting
DOIs
StatePublished - 2011

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