High quality ultraviolet AlGaN/GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers

Zhen Yu Li*, Ming Hua Lo, C. T. Hung, Shih Wei Chen, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Low dislocation density ultraviolet (UV) AlGaNGaN multiple quantum well (MQW) structure was grown using atomic layer deposition (ALD) technique. The AlGaNGaN MQW grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers formed by ALD grown AlNGaN superlattices. The as-grown sample showed smooth surface morphology with a root-mean-square roughness value of only 0.35 nm, and no surface cracks were found. The dislocation density was estimated to be as low as 3.3× 107 cm-2. X-ray and transmission electron microscope data showed the MQW had sharp interfaces with good periodicity. The sample had an UV photoluminescence emission at 334 nm (3.71 eV) with a very narrow linewidth of 47 meV at 13 K. The cathodoluminescence image revealed a fairly uniform luminescence pattern at room temperature. The AlGaNGaN MQW grown by ALD technique should be useful for providing high crystalline quality for fabrication of various optical devices.

Original languageEnglish
Article number131116
Number of pages3
JournalApplied Physics Letters
Volume93
Issue number13
DOIs
StatePublished - 29 Sep 2008

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