In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.
|Number of pages||4|
|Journal||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|State||Published - 1 Jan 1999|
|Event||Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
Duration: 7 Jun 1999 → 10 Jun 1999