High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

Tien-Sheng Chao*, J. L. Chen, C. S. Lai, Horng-Chih Lin, T. Y. Huang

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.

Original languageEnglish
Pages (from-to)74-77
Number of pages4
JournalInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 7 Jun 199910 Jun 1999

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