High-quality thermal oxide grown on high-temperature-formed SiGe

Y. H. Wu*, S. B. Chen, Albert Chin, W. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We have developed a high-quality gate oxide on Si0.6Ge0.4 with a 30 angstrom Si top layer. The good oxide integrity comparable to conventional thermal oxide is demonstrated by the low interface trap density of 6.2 × 1010 eV-1 cm-2, low oxide charge of 5.8 × 1010 cm-2, small leakage current at 3.3 V of 4.2 × 10-8 A/cm2, high breakdown field of 13.8 MV/cm, good charge-to-breakdown of 5.2 C/cm2, and small stress-induced leakage current. This good oxide integrity is directly related to our previously developed SiGe formed by solid phase epitaxy at high temperatures that is stable during thermal oxidation. This simple process is fully compatible with existing very large scale integration technology.

Original languageEnglish
Pages (from-to)1962-1964
Number of pages3
JournalJournal of the Electrochemical Society
Volume147
Issue number5
DOIs
StatePublished - 1 May 2000

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