High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

Van Truong Dai, Sheng-Di Lin*, Shih Wei Lin, Yi Shan Lee, Liang Chen Li, Chien Ping Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, twodimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.

Original languageEnglish
Pages (from-to)3811-3817
Number of pages7
JournalOptics Express
Volume22
Issue number4
DOIs
StatePublished - 24 Feb 2014

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