High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

C. L. Chen*, Tien-Sheng Chao, C. S. Lai, T. Y. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.

Original languageEnglish
Pages (from-to)981-983
Number of pages3
JournalElectronics Letters
Volume36
Issue number11
DOIs
StatePublished - 25 May 2000

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