High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials

Hung Tai Chang, Ching Chi Wang, Jung Chao Hsu, Ming Tsung Hung, Pei-Wen Li, Sheng Wei Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We present an effective approach to grow high-quality thin film of composite quantum dots (CQDs) as a building block for thermoelectric materials, in which 3 times the usual Ge deposition can be incorporated within a 3-fold CQD. Selective chemical etching experiments reveal that a thin Si inserted layer in the CQDs modifies the growth mechanism through surface-mediated diffusion and SiGe alloying. Such thin-film-like CQD materials are demonstrated to exhibit reduced thermal conductivity κ with respect to the conventional QDs, perhaps as a consequence of enhanced diffusive phonon scattering from the high Si/Ge interface density and enhanced local alloying effect.

Original languageEnglish
Article number101902
JournalApplied Physics Letters
Volume102
Issue number10
DOIs
StatePublished - 11 Mar 2013

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