High quality mosfet's with N2O annealed thin TEOS gate oxide

S. C. Sun, H. Y. Chang, T. S. Chao, C. Y. Lu, S. W. Chang, K. Y. Lee, L. S. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the electrical characteristics of MOSFETs utilizing thin (125 Å) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.

Original languageEnglish
Title of host publication1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages109-111
Number of pages3
ISBN (Electronic)0780309782
DOIs
StatePublished - 1 Jan 1993
Event1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan
Duration: 12 May 199314 May 1993

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
CountryTaiwan
CityTaipei
Period12/05/9314/05/93

Fingerprint Dive into the research topics of 'High quality mosfet's with N<sub>2</sub>O annealed thin TEOS gate oxide'. Together they form a unique fingerprint.

Cite this