High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition

Wei-Kuo Chen, Chen Shiung Chang, Wen Chung Chen

Research output: Contribution to conferencePaperpeer-review

Abstract

This paper offers a convenient method to grow good quality of GaAs films at low-temperature (LT), 425 °C, by using conventional metalorganic chemical vapor deposition (MOCVD) growth technique and taking tertiarybutylarsine (TBAs) along with triethylgallium (TEGa) as the epitaxial sources. By taking the results from 77 K PL and double crystal X-ray, the film grown at 425 °C has shown a full width at half maximum (FWHM) 8.2 meV and 14 arcsec. These results indicate that high quality of GaAs films can be obtained by using conventional MOCVD technique without setting any extra and external equipments.

Original languageEnglish
DOIs
StatePublished - 1 Jan 1994
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 12 Jul 199415 Jul 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period12/07/9415/07/94

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