High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstroms

Albert Chin*, Y. H. Wu, S. B. Chen, C. C. Liao, W. J. Chen

*Corresponding author for this work

Research output: Contribution to journalConference article

192 Scopus citations

Abstract

High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 angstroms, leakage current of 0.06 and 0.4 A/cm2 and Dit of both 3×1010 eV-1/cm2, respectively. The high K is further evidenced from high MOSFET's Id and gm with low Ioff. Good SILC and QBD are obtained and comparable with SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H2 annealing up to 550 °C.

Original languageEnglish
Pages (from-to)16-17
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Jan 2000
Event2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 13 Jun 200015 Jun 2000

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