High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 angstroms, leakage current of 0.06 and 0.4 A/cm2 and Dit of both 3×1010 eV-1/cm2, respectively. The high K is further evidenced from high MOSFET's Id and gm with low Ioff. Good SILC and QBD are obtained and comparable with SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H2 annealing up to 550 °C.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Jan 2000|
|Event||2000 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 13 Jun 2000 → 15 Jun 2000