High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

Tung Ming Pan, Tan Fu Lei, Wen Luh Yang, Chun Ming Cheng, Tien-Sheng Chao

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N2O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.

Original languageEnglish
Pages (from-to)68-70
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - 1 Feb 2001

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