High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Tien-Sheng Chao, Luh Yang Wen Luh Yang, C. M. Cheng, Ming Pan Tung Ming Pan, Fu Lei Tan Fu Lei

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.

Original languageEnglish
Pages142-145
Number of pages4
DOIs
StatePublished - 1 Jan 2001
Event2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan
Duration: 18 Apr 200120 Apr 2001

Conference

Conference2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings
CountryTaiwan
CityHsinchu
Period18/04/0120/04/01

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