High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Wen Luh Yang*, Tien-Sheng Chao, Chun Ming Cheng, Tung Ming Pan, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

High quality interpoly dielectrics have been fabricated by using NH3 and N2O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silicate (TEOS) oxide with N2O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics. The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simutaneously improve both charge-to-breakdown (up to 20 C/cm2) and electric breakdown field (up to 17 MV/cm).

Original languageEnglish
Pages (from-to)1304-1309
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume48
Issue number7
DOIs
StatePublished - 1 Jul 2001

Keywords

  • Barrier height
  • Charge-to-breakdown
  • Dielectric
  • Electric breakdown field
  • Interpoly
  • Nonvolatile memories
  • Polysilicon

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