High-quality InGaN/GaN heterojunctions and their photovoltaic effects

Xinhe Zheng*, Ray-Hua Horng, Dong Sing Wuu, Mu Tao Chu, Wen Yih Liao, Ming Hsien Wu, Ray Ming Lin, Yuan Chieh Lu

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

High-quality p-GaN/i- In0.1Ga0.9N/n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellösung fringes around the InGaN peak in high-resolution x-ray diffraction (HRXRD) confirm a sharp interface between InGaN and GaN films. The corresponding HRXRD and photoluminescence measurements demonstrate that there is no observable phase separation. The improvement in crystal quality yields high-performance photovoltaic cells with open-circuit voltage of around 2.1 eV and fill factor up to 81% under standard AM 1.5 condition. The dark current-voltage measurements show very large shunt resistance, implying an insignificant leakage current in the devices and therefore achieving the high fill factor in the illuminated case.

Original languageEnglish
Article number261108
JournalApplied Physics Letters
Volume93
Issue number26
DOIs
StatePublished - 1 Dec 2008

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    Zheng, X., Horng, R-H., Wuu, D. S., Chu, M. T., Liao, W. Y., Wu, M. H., Lin, R. M., & Lu, Y. C. (2008). High-quality InGaN/GaN heterojunctions and their photovoltaic effects. Applied Physics Letters, 93(26), [261108]. https://doi.org/10.1063/1.3056628