High quality Ge epitaxial films grown on In0.51Ga0.49P/GaAs and GaAs substrates by ultra high vacuum chemical deposition

Yung Hsuan Su*, Shih Hsuan Tang, Chi Lang Nguyen, Ching Wen Kuan, Hung Wei Yu, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The epitaxial growth of high quality Ge thin films on different materials of In0.51Ga0.49P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In0.51Ga0.49P and GaAs layers can be proved by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The comparison of surface morphology between Ge grown on In0.51Ga0.49P and GaAs was also analyzed by atomic force microscopy (AFM). The roughness of Ge on GaAs shows better than that of In0.51Ga0.49P. Both of these structures were designed for fabricating p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) for the integration of Ge p-channel device with III-V n-channel electronic device.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages502-504
Number of pages3
ISBN (Electronic)9781479957606
DOIs
StatePublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia
Duration: 27 Aug 201429 Aug 2014

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CountryMalaysia
CityKuala Lumpur
Period27/08/1429/08/14

Keywords

  • GaAs
  • Ge
  • Heterostructure
  • InGaP
  • Ultra High Vacuum Chemical Vapor Deposition (UHVCVD)

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    Su, Y. H., Tang, S. H., Nguyen, C. L., Kuan, C. W., Yu, H. W., & Chang, E. Y. (2014). High quality Ge epitaxial films grown on In0.51Ga0.49P/GaAs and GaAs substrates by ultra high vacuum chemical deposition. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 502-504). [6920908] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920908