High quality GaN-based Schottky barrier diodes

K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang, Cheng-Huang Kuo

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We report the fabrication of GaN-based Schottky barrier diodes with multi- Mgx Ny /GaN buffer. Compared to conventional devices with a low-temperature GaN buffer, we achieved a six orders of magnitude smaller leakage current. It was also found that effective Schottky barrier height is larger for the proposed device due to the reduction in surface defect density by using the multi- Mgx Ny /GaN buffer.

Original languageEnglish
Article number132110
JournalApplied Physics Letters
Volume93
Issue number13
DOIs
StatePublished - 14 Oct 2008

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    Lee, K. H., Chang, S. J., Chang, P. C., Wang, Y. C., & Kuo, C-H. (2008). High quality GaN-based Schottky barrier diodes. Applied Physics Letters, 93(13), [132110]. https://doi.org/10.1063/1.2993353