A model based on dislocation theory was developed for the reduction of dislocations in the GaAs epitaxial growth on compliant substrates. GaAs epilayers were grown by molecular beam epitaxy (MBE) using silicon-on-insulator (SOI) as a substrate. The model developed described the mechanism for the reduction of dislocation density. The compliant growth improved the crystal quality of the epilayers on lattice-mismatched substrates. The current-voltage characteristics demonstrated better performance with dc gain larger than 10 and breakdown voltage higher than 7 volts.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 May 2002|
|Event||20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States|
Duration: 1 Oct 2001 → 3 Oct 2001