High quality GaAs grown on Si-on-insulator compliant substrates

C. W. Pei*, J. B. Héroux, J. Sweet, W. I. Wang, J. Chen, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations

Abstract

A model based on dislocation theory was developed for the reduction of dislocations in the GaAs epitaxial growth on compliant substrates. GaAs epilayers were grown by molecular beam epitaxy (MBE) using silicon-on-insulator (SOI) as a substrate. The model developed described the mechanism for the reduction of dislocation density. The compliant growth improved the crystal quality of the epilayers on lattice-mismatched substrates. The current-voltage characteristics demonstrated better performance with dc gain larger than 10 and breakdown voltage higher than 7 volts.

Original languageEnglish
Pages (from-to)1196-1199
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
StatePublished - 1 May 2002
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: 1 Oct 20013 Oct 2001

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