High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

Chia Yen Huang, Pei Yu Wu, Kai Shiang Chang, Yun Hsiang Lin, Wei Chih Peng, Yem Yeu Chang, Jui Ping Li, Hung Wei Yen, Yew Chung Sermon Wu, Hideto Miyake, Hao Chung Kuo

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24 Scopus citations

Abstract

A high-quality and highly-transparent AlN template was prepared by regrowth on a sputter-deposited AlN buffer layer. The buffer layer was thermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition (MOCVD). The peakwidth of (002) and (102) plane x-ray rocking curve was 104 arcsec and 290 arcsec, respectively, indicating a threading dislocation density <5.0 × 10 8 cm −2 . Dislocations were reduced via grain growth and morphological evolution. The absence of carbon impurity source in sputter deposition also resulted in an improved transparency. According to transmission and reflection measurements, the absorption rate of λ=280 nm emission propagating through the template was less than 6%.

Original languageEnglish
Article number055110
JournalAIP Advances
Volume7
Issue number5
DOIs
StatePublished - 1 May 2017

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