High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well

Albert Chin*, Paul Martin, Pin Ho, Jim Ballingall, Tan Hua Yu, John Mazurowski

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

We report the successful growth of high quality molecular beam epitaxy (MBE) GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well on GaAs (111)B substrates. Modulation doped heterostructures show a 77 K mobility of 145 500 cm2/V s with a sheet density of 5.0×1011 cm-2. Photoluminescence of (111)B GaAs indicates a lower carbon incorporation than achieved on (100) substrates. The low growth temperature and high material quality obtainable in (111)B growth will provide advantages for laser diodes and heterostructure field effect transistors.

Original languageEnglish
Pages (from-to)1899-1901
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number15
DOIs
StatePublished - 1 Dec 1991

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