High-program/erase-speed SONOS with in situ silicon nanocrystals

Tsung Yu Chiang*, Tien-Sheng Chao, Y. H. Wu Yi-Hong, Wen Luh Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (<5.5 V), lower operation voltage, high P/E speed, and longer retention time (<108s for 13% charge loss).

Original languageEnglish
Pages (from-to)1148-1151
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number10
DOIs
StatePublished - 11 Sep 2008

Keywords

  • Memory window
  • Nonvolatile memory
  • Retention time
  • Silicon nanocrystals (Si-NC)

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