High-power single mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs

H. P.D. Yang, R. S. Hsiao, Kuo-Jui Lin, J. Y. Chi, I. C. Hsu, Fang I. Lai, Hao-Chung Kuo, N. A. Maleev, S. A. Blokhin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first demonstrated. Single fundamental mode CW output power of 3.8 mW has been achieved in the 990 nm range, with a threshold current of 1 mA. SMSR larger than 35 dB has been observed over entire operation range.

Original languageEnglish
Title of host publication2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest
Pages71-72
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Kohala Coast, HI, United States
Duration: 17 Sep 200621 Sep 2006

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Conference

Conference2006 IEEE 20th International Semiconductor Laser Conference, ISLC
CountryUnited States
CityKohala Coast, HI
Period17/09/0621/09/06

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    Yang, H. P. D., Hsiao, R. S., Lin, K-J., Chi, J. Y., Hsu, I. C., Lai, F. I., Kuo, H-C., Maleev, N. A., & Blokhin, S. A. (2006). High-power single mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs. In 2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest (pp. 71-72). [1708091] (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2006.1708091