High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

A. R. Kovsh*, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. V. Vasil'ev, Yu M. Shernyakov, D. A. Livshits, M. V. Maximov, D. S. Sizov, N. V. Kryzhanovskaya, N. A. Pikhtin, V. A. Kapitonov, I. S. Tarasov, N. N. Ledentsov, V. M. Ustinov, J. S. Wang, L. Wei, Kuo-Jui Lin, J. Y. Chi

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells (QW) were presented. High gain submonolayer quantum dots allowed to use broad waveguide design typical for high power laser based on QWs. The results demonstrated the potential of submonolayer technique to form active region of high power laser.

Original languageEnglish
Pages (from-to)353-356
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5023
DOIs
StatePublished - 15 Sep 2003
Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: 17 Jun 200221 Jun 2002

Keywords

  • Diode lasers
  • Molecular beam epitaxy
  • Semiconductor quantum dots

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    Kovsh, A. R., Zhukov, A. E., Maleev, N. A., Mikhrin, S. S., Vasil'ev, A. V., Shernyakov, Y. M., Livshits, D. A., Maximov, M. V., Sizov, D. S., Kryzhanovskaya, N. V., Pikhtin, N. A., Kapitonov, V. A., Tarasov, I. S., Ledentsov, N. N., Ustinov, V. M., Wang, J. S., Wei, L., Lin, K-J., & Chi, J. Y. (2003). High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells. Proceedings of SPIE - The International Society for Optical Engineering, 5023, 353-356. https://doi.org/10.1117/12.514262