Broad area lasers based on InAs-GaAs quantum dots formed by submonolayer deposition were fabricated. High modal gain of submonolayer quantum dots permits the use of broad-waveguide and highly doped design. Continuous wave output power of 6W limited by mirror damage and conversion efficiency of 58% were demonstrated at 20 °C. The characteristic temperature of 150 K was achieved.
- Molecular beam epitaxy
- Quantum dots