High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

A. R. Kovsh*, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, D. A. Livshits, Y. M. Shernyakov, M. V. Maximov, N. A. Pihtin, I. S. Tarasov, V. M. Ustinov, Zh I. Alferov, J. S. Wang, L. Wei, Kuo-Jui Lin, J. Y. Chi, N. N. Ledentsov, D. Bimberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Broad area lasers based on InAs-GaAs quantum dots formed by submonolayer deposition were fabricated. High modal gain of submonolayer quantum dots permits the use of broad-waveguide and highly doped design. Continuous wave output power of 6W limited by mirror damage and conversion efficiency of 58% were demonstrated at 20 °C. The characteristic temperature of 150 K was achieved.

Original languageEnglish
Pages (from-to)491-493
Number of pages3
JournalMicroelectronics Journal
Volume34
Issue number5-8
DOIs
StatePublished - May 2003

Keywords

  • Lasers
  • Molecular beam epitaxy
  • Quantum dots

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