High-power GaN light-emitting diodes with patterned copper substrates by electroplating

Ray-Hua Horng; C. E. Lee; S. C. Hsu; S. H. Huang; C. C. Wu; C. Y. Kung; D. S. Wuu

doi:10.1002/pssa.200405091

High-power GaN light-emitting diodes with patterned copper substrates by electroplating

Ray-Hua Horng^*, C. E. Lee, S. C. Hsu, S. H. Huang, C. C. Wu, C. Y. Kung, D. S. Wuu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article

17 Scopus citations

Abstract

A high-power chip structure of GaN/mirror/Cu light-emitting diodes (LEDs) was developed by a combination of laser lift-off and electroplating techniques. Especially, the LED samples can be accomplished without additional scribing or dicing process. The luminance intensity of the GaN/mirror/Cu LED is about 50% higher than that of the original GaN/sapphire sample. The output power of the GaN/mirror/Cu LED increases linearly with injection current up to 180 mA, while early saturation of the GaN/sapphire device occurs at 70 mA. These indicate that the joule heating is less pronounced for the GaN/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

Original language	English
Pages (from-to)	2786-2790
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	12
DOIs	https://doi.org/10.1002/pssa.200405091
State	Published - 1 Sep 2004

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title = "High-power GaN light-emitting diodes with patterned copper substrates by electroplating",

abstract = "A high-power chip structure of GaN/mirror/Cu light-emitting diodes (LEDs) was developed by a combination of laser lift-off and electroplating techniques. Especially, the LED samples can be accomplished without additional scribing or dicing process. The luminance intensity of the GaN/mirror/Cu LED is about 50% higher than that of the original GaN/sapphire sample. The output power of the GaN/mirror/Cu LED increases linearly with injection current up to 180 mA, while early saturation of the GaN/sapphire device occurs at 70 mA. These indicate that the joule heating is less pronounced for the GaN/mirror/Cu LED sample where the metallic substrate provides a good heat sink.",

author = "Ray-Hua Horng and Lee, {C. E.} and Hsu, {S. C.} and Huang, {S. H.} and Wu, {C. C.} and Kung, {C. Y.} and Wuu, {D. S.}",

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AU - Horng, Ray-Hua

AU - Lee, C. E.

AU - Hsu, S. C.

AU - Huang, S. H.

AU - Wu, C. C.

AU - Kung, C. Y.

AU - Wuu, D. S.

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N2 - A high-power chip structure of GaN/mirror/Cu light-emitting diodes (LEDs) was developed by a combination of laser lift-off and electroplating techniques. Especially, the LED samples can be accomplished without additional scribing or dicing process. The luminance intensity of the GaN/mirror/Cu LED is about 50% higher than that of the original GaN/sapphire sample. The output power of the GaN/mirror/Cu LED increases linearly with injection current up to 180 mA, while early saturation of the GaN/sapphire device occurs at 70 mA. These indicate that the joule heating is less pronounced for the GaN/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

AB - A high-power chip structure of GaN/mirror/Cu light-emitting diodes (LEDs) was developed by a combination of laser lift-off and electroplating techniques. Especially, the LED samples can be accomplished without additional scribing or dicing process. The luminance intensity of the GaN/mirror/Cu LED is about 50% higher than that of the original GaN/sapphire sample. The output power of the GaN/mirror/Cu LED increases linearly with injection current up to 180 mA, while early saturation of the GaN/sapphire device occurs at 70 mA. These indicate that the joule heating is less pronounced for the GaN/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

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