High-power GaN light-emitting diodes with patterned copper substrates by electroplating

Ray-Hua Horng*, C. E. Lee, S. C. Hsu, S. H. Huang, C. C. Wu, C. Y. Kung, D. S. Wuu

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

A high-power chip structure of GaN/mirror/Cu light-emitting diodes (LEDs) was developed by a combination of laser lift-off and electroplating techniques. Especially, the LED samples can be accomplished without additional scribing or dicing process. The luminance intensity of the GaN/mirror/Cu LED is about 50% higher than that of the original GaN/sapphire sample. The output power of the GaN/mirror/Cu LED increases linearly with injection current up to 180 mA, while early saturation of the GaN/sapphire device occurs at 70 mA. These indicate that the joule heating is less pronounced for the GaN/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

Original languageEnglish
Pages (from-to)2786-2790
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
StatePublished - 1 Sep 2004

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