High-power diode-pumped actively Q-switched Nd:YVO4 self-Raman laser: Influence of dopant concentration

Yung-Fu Chen

doi:10.1364/OL.29.001915

High-power diode-pumped actively Q-switched Nd:YVO₄ self-Raman laser: Influence of dopant concentration

Yung-Fu Chen^*

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article

135 Scopus citations

Abstract

Efficient self-Raman frequency conversion from a diode-pumped actively Q-switched Nd'YVO₄ laser at 1064 nm to Stokes emission at 1176 nm is achieved for the first time to the author's knowledge. With a 0.2-at. % NdTYO₄ crystal, greater than 1.5 W of power at a wavelength of 1176 nm at a repetition rate of 20 kHz was generated with a diode pump power of 10.8 W, corresponding to a conversion of 13.9%. Pulse width and peak power were 18 ns and 4.2 kW, respectively.

Original language	English
Pages (from-to)	1915-1917
Number of pages	3
Journal	Optics Letters
Volume	29
Issue number	16
DOIs	https://doi.org/10.1364/OL.29.001915
State	Published - 15 Aug 2004

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Chen, Y-F. (2004). High-power diode-pumped actively Q-switched Nd:YVO₄ self-Raman laser: Influence of dopant concentration. Optics Letters, 29(16), 1915-1917. https://doi.org/10.1364/OL.29.001915

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