@inproceedings{0da3596b25744387a5f7f7f57f4d2bf0,
title = "High power C-doped GaN photoconductive THz emitter",
abstract = "We report for the first time a carbon-doped gallium nitride based large aperture photoconductive switch grown on the sapphire substrate to generate high power sub-THz waves. The estimated THz wave energy was about 1.5pJ/pulse when this device was pumped by a 266nm wavelength femtosecond laser operating at 1 kHz pulse rate with the average power of 20mW under the dc bias voltage of 110V. The terahertz time domain spectroscopy was performed using a low temperature grown gallium arsenide photoconductive switch detector and the frequency spectrum was found to be in the 0.1-0.2 THz regime.",
keywords = "Carbon-doped GaN-PCS, THz emitter",
author = "Singh, {Brahm Pal} and Osamu Imafuji and Yutaka Hirose and Yasuyuki Fukushima and Shinichi Takigawa and Daisuke Ueda",
year = "2007",
month = dec,
day = "1",
doi = "10.1109/ICIMW.2007.4516829",
language = "English",
isbn = "1424414385",
series = "IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics",
pages = "1004--1005",
booktitle = "IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics",
note = "null ; Conference date: 03-09-2007 Through 07-09-2007",
}