High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

Wei Chih Peng, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

The high-power AlGaInP light-emitting diodes (LED) fabricated on Cu substrates were analyzed. The indium-tin-oxide as the diffusion barrier layer was used to bond the AlGaInP LED structure to a Cu substrate. It was shown that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA. The results show that the luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which is three times higher than that of the GaAs substrate LEDs.

Original languageEnglish
Pages (from-to)1841-1843
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number11
DOIs
StatePublished - 15 Mar 2004

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