High photothermal properties in silicon nanostructures

Ting Ting Ren, Mao Qugn Wei, Chin Chiang Hsiao, Bo Yi Chen, Mei Yi Li, Jui Min Liou, Fu-Hsiang Ko, Yu Sheng Lai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This research describes the p-type nanostalactites (p-type NS) with high photothermal conversion capability has been demonstrated by rapid INC process without extra heat treatment. In optical property, p-type NS has ultralow reflectance below 5 % and high light absorption due to rough structures in the broadband wavelength (350 nm-1100 nm). It looks like a black body. Silicon, an indirect band material, can release thermal energy during the recombination process of photo-generated electron-hole pairs. P-type NS converts photon energy into heat rapidly and then photothermal effect occurs. Then, the temperature change of p-type NS is faster in 10 second than bulk p-type silicon. These nanostructures can not only enhance thermal conversion efficiency but be regarded as a great heat absorber.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages219-221
Number of pages3
ISBN (Electronic)9784990875312
DOIs
StatePublished - 15 Aug 2016
Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
Duration: 6 Jul 20168 Jul 2016

Publication series

NameProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
CountryJapan
CityKyoto
Period6/07/168/07/16

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